Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• case of SHIBL because of the low mass of the He+ ions, these effects are negligible when compared to those due to electron backscattering in EBL. Future work should seek to establish the origins of the proximity effect in SHIBL, i.e., whether it is due to secondary electrons or true ion backscattering

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• facilitates the identification of platinum nanoparticles based on the high electron backscattering efficiency of this heavy element (Figure 4a and Figures S10–S12, Supporting Information File 1). Images were collected from 100 individual nanostructures of each morphology while exclusively considering

Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

• Ivan V. Komissarov,
• Nikolai G. Kovalchuk,
• Vladimir A. Labunov,
• Ksenia V. Girel,
• Olga V. Korolik,
• Mikhail S. Tivanov,
• Algirdas Lazauskas,
• Mindaugas Andrulevičius,
• Tomas Tamulevičius,
• Viktoras Grigaliūnas,
• Šarunas Meškinis,
• Sigitas Tamulevičius and
• Serghej L. Prischepa

Beilstein J. Nanotechnol. 2017, 8, 145–158, doi:10.3762/bjnano.8.15

• graphene multilayers, electron backscattering is allowed [2]. However, when the layers of graphene are not strongly electronically coupled, this scenario is not always realized. Indeed, for turbostratic graphite, where Bernal stacking is destroyed, even for a very large number of layers, the unique

Fabrication of high-resolution nanostructures of complex geometry by the single-spot nanolithography method

• Alexander Samardak,
• Margarita Anisimova,
• Aleksei Samardak and
• Alexey Ognev

Beilstein J. Nanotechnol. 2015, 6, 976–986, doi:10.3762/bjnano.6.101

• that the electron backscattering coefficient for bulk Au is about three times larger than for bulk Si at an acceleration voltage of 10 kV [18]. The electron beam energy plays a very important role in the fabrication process because of its strong effect on the electron penetration depth and the number

Simulation of electron transport during electron-beam-induced deposition of nanostructures

• Francesc Salvat-Pujol,
• Harald O. Jeschke and
• Roser Valentí

Beilstein J. Nanotechnol. 2013, 4, 781–792, doi:10.3762/bjnano.4.89

• interacts with the substrate, when the nanostructure becomes thicker the transport takes place almost exclusively in the nanostructure. In particular, a larger deposit density leads to enhanced electron backscattering. This work shows how mesoscopic radiation-transport techniques can contribute to a model

• during post-growth electron-beam treatments. Keywords: electron backscattering; electron transport; (F)EBID; Monte Carlo simulation; PENELOPE; Introduction Electron-beam-induced deposition (EBID) [1][2][3] is a suitable method for the template-free fabrication of nanostructures. Molecules of a

• in deposition rate would imply analyzing the separate contributions from backscattered electrons, forward-scattered electrons, and secondary electrons [26]. Two aspects of Figure 5a should be emphasized. (1) In order to further elucidate the dependence of the electron backscattering probability on